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Transfer from: Prospective Industry Research Institute

major listed companies in the industry: China resources micro (688396); Sanan Optoelectronics (600703); Shilanwei (600460); Starr semi-conductor (603290); Tianyue Advanced (688234), etc.

The core data of this article: market size, penetration, market forecast

1, the global third-generation semiconductor materials industry development environment

The third-generation semiconductor materials have attracted global attention and have become the forefront of semiconductor technology research and the focus of industrial competition. The United States, Japan, Europe and other countries are actively carrying out strategic deployment. Major national government deployments are as follows:

2, global third-generation semiconductor materials industry technology progress

-- Silicon Carbide: Commercial Mass Production of 8-inch SiC Wafers Begins

in April 2022, the 8-inch SiC substrate at olfspeed's mohawk valley factory was officially put into production. in September, it announced another investment of us $1.3 billion to build an 8-inch SiC substrate factory in north Carolina. Onsemi 8-inch SiC wafer substrate samples are available and are expected to be certified in 2024 and shipped on a large scale in 2025. Soitec Releases First 8-inch SiC Substrate Product; Sumitomo Metal subsidiary Sicoxs to build 8-inch SiC composite substrate production line. In addition, SiC epitaxial supplier Showa Denko announced the availability of 8-inch SiC epitaxial wafer samples. In addition to Hanlei and X-Fab, South Korea DB HiTek and United Power are also accelerating the 8-inch wafer manufacturing layout.

-- Gallium Nitride: Preparation of 6-inch GaN Single Crystal

Toyoda Gosei cooperated with Osaka University to grow high-quality seed crystals on sapphire substrates using sodium cosolvent liquid phase method, and then grow 6-inch GaN single crystals through HVPE method. Progress has been made in GaN substrate laser stripping technology. Japanese research teams including Nobel Prize winner Hiroshi Amano have published a new GaN substrate laser thinning technology. The device layer is stripped by back laser irradiation to minimize the consumption of GaN substrate. This technology can be carried out after the device is manufactured, increasing the production efficiency of GaN substrate by 3 times, eliminating the substrate polishing process and helping to reduce the manufacturing cost of GaN wafers, it is also expected to be applied to SiC single crystal cutting. South Korea IVworks cooperated with American Applied Materials to prepare 6-inch and 8-inch GaN epitaxial wafers suitable for 1200V by MBE method, and the thickness of GaN thin film layer was monitored by hybrid MBE equipment to improve the yield.

3. Development status of the global third-generation semiconductor materials industry

-Market size

At present, the third generation of semiconductor materials research and development of more mature materials are SiC and GaN,ZnO, diamond, aluminum nitride and other materials are still in the initial stage of research. In terms of the overall market size of SiC and GaN, the global market size of SiC and GaN materials is growing year by year from 2018 to 2022. In 2022, combined Yole and IHS data show that the overall global market size of SiC and GaN will reach 3.61 billion billion US dollars, up 49.42 percent from 2021. According to preliminary estimates, the overall global market size of SiC and GaN may reach $4.3 billion in 2023.

-- Permeability

Overall, the development of third-generation semiconductors has entered a period of rapid growth. According to Yole's data, third-generation semiconductor power devices (including SiC and GaN) will account for about 5%-6.5% of the overall semiconductor power device market in 2022.

4. Market Forecast: Market Size Reaching $21.8 billion by 2029

With the increase in 5G, new energy vehicles, and national defense and military applications, the global third-generation semiconductor material market will maintain a relatively high growth rate in the next five years. Based on Yole and other company data, CASA expects SiC power electronics market to reach US $4.8 billion by 2026, GaN power electronics market to exceed US $2 billion, with a total size of over US $9.2 billion and a market of over US $17.8 billion in 2029. Based on Yole and Trendforce data, GaN RF device and module market will maintain an 18% growth rate in the next few years, with a market size of about US $2.4 billion by 2026, according to this growth rate, the scale can reach 3.9 billion US dollars by 2029, and the overall scale of third-generation semiconductor materials can reach 21.8 billion US dollars.

For more research and analysis of this industry, please refer to the Prospective Industry Research Institute's "China's Third Generation Semiconductor Materials Industry Development Prospect Forecast and Investment Strategic Planning Analysis Report".

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