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The core content of this article: Global silicon carbide power device market scale; Global silicon carbide power device application field distribution

Global Silicon Carbide Industry Development

Silicon carbide is a compound composed of two elements carbon and silicon with extremely high abundance on the earth, but it is difficult to see its trace in the crustal veins. In the evolution of the earth for billions of years, no crystalline silicon carbide minerals with industrial application value have been formed. So far, only a small amount of natural crystalline silicon carbide has been found in diamond or volcanic rocks. The earliest known discovery of silicon carbide originated from a meteorite when the solar system was just born 4.6 billion years ago, so it is also known as "a semiconductor material that has experienced a 4.6 billion-year journey of time and light".

Technical status of the global silicon carbide industry

in terms of SiC substrate, 6-inch SiC substrate products have been commercially used in the world. several major mainstream manufacturers have introduced 8-inch substrate samples with a microtube density of 0.6 cm-2. In terms of SiC epitaxy, 6-inch products have been commercially used, and 8-inch products have been developed to meet the preparation requirements of medium and low voltage, high voltage and ultra-high voltage power devices.

The global silicon carbide power device market size in 2023 is about $3.04 billion

The silicon carbide market is growing rapidly, driven by strong automotive applications, especially in the demand for EV main inverters. According to data released by Yole, the global silicon carbide power device market size is $1 billion in 2021. According to the data disclosed by the TrendForce, the global silicon carbide power device market in 2023 is about $3.04 billion, and the silicon carbide power device market has grown rapidly in the past two years.

Global distribution of silicon carbide power device applications

according to Yole report, global silicon carbide power devices can be mainly applied to new energy vehicle manufacturing, charging piles, industrial scenarios, transportation, communication and infrastructure, consumer electronics, etc. among them, new energy vehicles account for more than 63% in 2021, energy vehicles account for 41.5 of the global downstream market share of silicon carbide, and SiC is one of the ideal materials for making high temperature, high frequency, high power and high voltage devices, the technology has also matured, making it an ideal choice for achieving the best performance of new energy vehicles. Compared with traditional solutions, SiC-based solutions make the system more efficient, lighter and more compact. At present, SiC devices are mainly used in EV/HEV power control units, inverters, DC/DC converters, on-board chargers, etc. In addition, photovoltaic + energy storage is also one of the main application areas of silicon carbide power devices, accounting for 23.1; PFC/power supply ranked third with a market share of 19.7.

Competitive landscape of global silicon carbide companies

and the global regional distribution of silicon carbide is roughly the same, the current global leading brands of silicon carbide are distributed in the United States, Europe, Japan, the three major regions. Among them, the U.S. Wolfspeed in the silicon carbide wafer market share of as much as 60%. In the early 1990 s, Wolfspeed companies in the United States successfully launched silicon carbide wafer products, successfully developed 4-inch silicon carbide wafers in the late 1990 s, and successfully developed the first commercial silicon carbide diode products in 2001.

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