On the evening of December 12, the "2024 Expert Aurora Award" award ceremony was held in Shenzhen, and in this annual event in the industry, Tianyue Advanced won the "8-inch SiC Pioneer Award" and "China SiC Substrate Influential Enterprise" awards, both ranking first, demonstrating Tianyue's advanced strength.

At this award ceremony, the 2024 Aurora Award set up the high-profile "8-inch SiC Pioneer Award" to recognize those leading companies with outstanding performance in the silicon carbide industry. The Aurora Award has long been prestigious in the industry, and its results have been praised as the "wind vane" of the third-generation semiconductor industry from the perspective of industry depth, meticulous screening and selection of products that attract attention in the market. In recent years, Tianyue Advanced has been in the forefront of the world in terms of technology and shipment of 8-inch substrates, and has become the first choice of international leading enterprises, and has been highly recognized by the market in terms of brand influence, market share, innovation ability and future development potential.

As a leading enterprise in the field of silicon carbide substrates in China, relying on more than ten years of technology accumulation and industrialization advantages, Tianyue Advanced has realized the major strategy of catching up on semi-insulating substrates and 6-inch N-type silicon carbide substrates and leading 8-inch silicon carbide substrates. The company not only expands the diameter independently, but also realizes the preparation of 8-inch conductive 4H-SiC single crystal substrate with near-"zero TSD" and low BPD density, which effectively improves the utilization rate of wafer preparation. The whole process quality control ensures product performance, stabilizes scale production capacity and responds to customer needs in a timely manner. Completing the rapid layout from the preparation of 8-inch conductive substrate to industrialization, it has the advantage of leading the development of the industry in terms of product quality and shipment, and has a high recognition and reputation in the international market.

In March 2023, at the Shanghai Semicon China Conference, Tianyue Advanced released the world's first 8-inch liquid-phase low-defect silicon carbide substrate; In May this year, the world's first 6-inch 4-degree declination P-type silicon carbide substrate prepared by liquid phase method was launched and delivered to customers, once again becoming the world's first, laying the foundation for the application of silicon carbide power devices in smart grids; In November this year, during the European Semicon Europa, Tianyue Advanced released the world's first 12-inch N-type silicon carbide substrate, which rewrote the history of silicon carbide substrates, attracted widespread international attention, and will also become a milestone event in the development of silicon carbide monocrystalline and substrates. Tianyue Advanced continues to innovate and make breakthroughs, and a number of technologies and products are at the forefront of the world and lead the development of the industry. Based on the outstanding achievements of Tianyue Advanced, it was rated as the first place in "China's SiC Substrate Influential Enterprise" at this conference.

In the future, Tianyue Advanced will continue to uphold the concept of "advanced quality sustainability", adhere to independent innovation, quality leadership, and contribute to the broad development of the silicon carbide industry.