(Yicai Global) Oct. 24 -- Research on manufacturing large silicon carbide (SiC) equipment and technology materials and devices has recently received technical acceptance, the Ministry of Science and Technology reported today.
The international community calls silicon carbide (SiC), gallium nitride (GaN) and other wide-band gap semiconductor materials third-generation semiconductor materials. They are particularly resistant to high voltages and temperatures.
The large-scale industrialized development of China's third-generation semiconductor materials has long been restricted as vacuum, high-temperature heating and accurate temperature control technologies play critical roles in their production.
With the support of the National 863 Program, a research and development team led by Xinjiang Tianke Hedao Blue Semiconductor Co. has developed key equipment with Chinese intellectual property rights for a four- to six-inch SiC monocrystal growth furnace that meets the requirements for making high-voltage SiC power and electronic devices. The Chinese Academy of Sciences' Institute of Physics and Institute of Semiconductors as well as Zhejiang University were on the team.
The process' development is important in promoting the advancement of third-generation semiconductor materials and devices, lowering the cost of the industrial chain and enhancing the core international competitiveness of China's wide-band gap semiconductor industry.