SHANGHAI :
Chinese, Japanese Scientists Develop New Two-Dimensional Material Semiconductor Quantum Transistors
Liao Shumin
DATE:  Oct 25 2017
/ SOURCE:  Yicai
Chinese, Japanese Scientists Develop New Two-Dimensional Material Semiconductor Quantum Transistors Chinese, Japanese Scientists Develop New Two-Dimensional Material Semiconductor Quantum Transistors

(Yicai Global) Oct. 25 -- Professor Guo Guoping with the Research Group of University of Science and Technology of China, in cooperation with scholars from the National Institute for Material Science of Japan and others, has first achieved fully electrically-controlled quantum dot devices in a semiconductors' flexible two-dimensional material system, and this new type of semiconductor quantum transistor offers a new way to produce flexible quantum chips.

His findings appeared recently in Science and Progress, an offshoot of the internationally authoritative journal Science, xinhuanet.com reported.

After several decades' development, semiconductor gated quantum dots -- a type of quantum transistor -- have become one of the popular candidate systems to produce quantum chips. The two-dimensional material system, represented by graphene, has become the key research object for flexible electronics and quantum electronics. However, its energy band structure and interface defects and impurities render the quantum dots in two-dimensional materials unable to achieve effective electrical modulation.

Guo Guoping's research group, in cooperation with scholars from the National Institute for Material Science and Institute of Physical and Chemical Research of Japan, has selected a new two-dimensional material, molybdenum disulfide, for further study.

Using a series of modern semiconductor technologies combined with boron nitride packaging technology, they have effectively reduced impurities and defects in the quantum dot structure, and achieved fully electrically-controlled dual quantum dot structures in such materials for the first time. They realized the electronically-controlled modulation from artificial atoms to artificial molecules by electrode voltages at extremely low temperatures.

This study reveals the influence of short-range defects and spin-orbit coupling in molybdenum disulfide on electrical transport properties and extensively explores the possibilities of its application to semiconductor quantum chips and its broad application prospects in quantum electronics.

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Keywords:   Semiconductor Quantum Transistor,Quantum Chip,Molybdenum Disulfide